ASSESSEMENT OF THE EFFECT OF TEMPERATURE ON DRIFT AND DIFFUSION CURRENT ON PN-JUNCTION SILICON DIODE UNDER FORWARD BIAS CONDITION. The Journals of the Nigerian Association of Mathematical Physics, [S. l.], v. 71, p. 151–158, 2026. DOI: 10.60787/jnamp.vol71no.613. Disponível em: https://nampjournals.org.ng/index.php/home/article/view/613.. Acesso em: 9 jan. 2026.