OPTICAL PROPERTIES OF CADMIUM MANGANESE TELLURIDE (Cd₁₋ₓMnₓTe) THIN FILMS
DOI:
https://doi.org/10.60787/tnamp.v24.677Keywords:
Cd₁₋ₓMnₓTe, thin films, Optical properties, Band gap, Extinction coefficient, Optical conductivityAbstract
Cadmium manganese telluride (Cd₁₋ₓMnₓTe) is a tunable II–VI semiconductor with significant potential for optoelectronic and photovoltaic applications. In this study, Cd₁₋ₓMnₓTe thin films were fabricated and their optical properties systematically investigated over the ultraviolet–visible spectral range. Spectrophotometric measurements of absorbance, transmittance, and reflectance were employed to evaluate key optical parameters, including the absorption coefficient (α), extinction coefficient (k), refractive index (n), and optical conductivity (σₒₚₜ). The optical band gap was determined using the Tauc relation, revealing direct allowed electronic transitions. The films exhibit strong absorption in the ultraviolet region, moderate reflectance, and a progressive increase in transmittance toward the visible region. Furthermore, manganese incorporation was observed to significantly influence band gap tuning. These results indicate that Cd₁₋ₓMnₓTe thin films possess promising optical characteristics for applications in UV photodetectors, photovoltaic devices, optical windows, and radiation detection systems.
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