INTERDEPENDENCE OF DEPOSITION TIME, DOPING CONCENTRATION, AND ANNEALING ON THE OPTICAL BEHAVIOR OF MG-DOPED ANTIMONY SULPHIDE (Sb2S3) THIN FILMS.
DOI:
https://doi.org/10.60787/jnamp.v67i2.364Keywords:
Dopant, Band gap, Chemical bath, Deposition, Antimony SulphideAbstract
Mg-doped antimony sulphide (Sb2S3) thin films were deposited on glass substrates via chemical bath deposition at room temperature, with deposition times of 60 and 120 minutes. Post-deposition, films were annealed at 100°C, 200°C, and 300°C for 60 minutes. Optical properties, assessed using a UV-Vis spectrophotometer (200-1000 nm range), reveal significant influences of deposition time, Mg concentration, and annealing temperature on absorbance, refractive index, and bandgap energy. Films deposited for 120 minutes show higher refractive indices and initial bandgap energies, decreasing more upon annealing than 60-minute films. Increased Mg concentration and higher annealing temperatures enhance refractive indices and cause a red shift, reducing the bandgap energy. Bandgaps range from 3.61 to 3.91 eV, indicating potential for high-power electronics applications. This study underscores the importance of deposition time, doping concentration, and annealing temperature in tailoring Mg-doped Sb2S3 thin films for optical devices.
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