INVESTIGATING THE EFFECT OF IRON DOPANTS CONCENTRATION ON THE OPTICAL PROPERTIES OF SILAR DEPOSITED ZnSFe THIN FILMS
Keywords:
Zinc Sulphide iron thin films, optical properties, iron dopantAbstract
This article investigated the influence of iron dopants concentration on Zinc Sulphide(ZnS) thin films deposited on glass substrates via successive ionic layer adsorption (SILAR) Technique using Zinc acetate, Zn(CH3COO)2, thioacetamide (S 2 H5 NS), Iron (II) Chloride dehydrate(Fe Cl 2. 2H 2 O), ethanol and ammonia in alkaline medium annealed between 283K and 500K were investigated. This article
studies the effects of iron dopant concentration (x = 0.05, 0.03 and 0.02) on the optical and solid state properties of Zinc Sulphide(ZnS) thin films. The percentage elemental composition studies were performed by Electron Dispersive Spectroscopy (EDS) Analysis. The Uv-visible studies were done using spectrometer in the Technical University, Ibadan. The direct band gap varied from 4.81eV for 0.01M,
4.50eV for 0.02M and 4.00eV for 0.05M. The indirect band gap varied from 3.80eV for 0.01M, 3.67eV for 0.02M and 3.40eV for 0.05M. The values of the optical properties and solid state values were concentration dependent. The large band gap possessed by ZnSFe thin films suggest that the films can be used for applications where high voltage, frequencies and temperature are required.
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